PART |
Description |
Maker |
K4H1G0738C-UC_LB0 K4H1G0638C K4H1G0638C-UC_LA2 K4H |
Stacked 1Gb C-die DDR SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H1G0638C-UC/LA2 K4H1G0738C-UC/LA2 K4H1G0738C-UC/ |
Stacked 1Gb C-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
WV3EG128M72EFSR335D3SG |
1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA 1GB 128Mx72 DDR SDRAM的注册瓦锁相环,FBGA封装
|
Electronic Theatre Controls, Inc.
|
WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲,瓦特/锁相
|
Supertex, Inc.
|
W3EG64128S-AD4 |
1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲瓦锁相
|
Electronic Theatre Controls, Inc.
|
M312L5128MT0 M312L5128MT0-CA0 M312L5128MT0-CA2 M31 |
DDR SDRAM Registered Module ( TSOP-II ) 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYS64D128320HU-6-B HYS64D128320HU-5-B HYS72D128320 |
DDR SDRAM Modules - 1GB (128Mx64) PC2700 2-bank DDR SDRAM Modules - 1GB (128Mx64) PC3200 2-bank DDR SDRAM Modules - 1GB (128Mx72) PC3200 2-bank DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank
|
Infineon
|
HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
ST62P20CM3/XXX ST62P10CM6/XXX ST62P10CM1/XXX ST62P |
8-BIT MICROCONTROLLER IC, SDRAM, DDR400, 16MEGX16 1GB DDR SDRAM SODIMM 8位微控制
|
Exar, Corp.
|
K4T1G044QA K4T1G164QA-ZCD5 K4T1G164QA-ZCE6 K4T1G04 |
1Gb A-die DDR2 SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM 32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|